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14 V and for the gate widths: w = 50, 75,100,150 and 200 nm. The frozen surface predictions are shown with a continuous line, while a dashed line represents the Fermi level pinning prediction for w = 200 nm. Therefore, the plots of ne(x) in Figs. 1 and 2 can be easily transformed into plots of the effective depleting potentials given by the Fermi level pinning and the frozen surface approximations, respectively. As can be seen, for the same Vg and gate parameters, the effective potentials have similar maxima, but differ somewhat in their surface shapes.
1 -1 0 Polarization of the driver cell 1 Fig. 6. 991 nm hole. The holes are located at the corners of a square with a 110 ran separation between centers. Solid curves represent the response function for three values of the inter-cell distance (250, 265 and 280 nm). The dotted curves correspond to the response function for a situation in which the action of image charges has been neglected. of the distance between cell centers: from 250 nm to 280 nm. The dotted lines represent, for comparison, the results obtained neglecting the effect of the image charges: the shift is less than in the case with images because the electrostatic interaction between cells is not screened in this case.
Jones, and D. G. Hasko, Phys. Rev. Lett. 70, 1311 (1993). This page is intentionally left blank CHAPTER 3 R e a l i s t i c T i m e - I n d e p e n d e n t M o d e l s of a Q C A C e l l J o a n Martorell Dept. d'Estructura i Constituents de la Materia Facultat de Fisica, Universitat de Barcelona E-08028 Barcelona, Spain Donald W. L. 1. Introduction We present several approaches to the time-independent realistic simulation of Q C A cells, with models t h a t are capable of yielding quantitative agreement with experiments.